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D
P-Pack
G S
APL1001P
1000V 18.0A 0.60W HERMETIC PACKAGE
POWER MOS IV (R)
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
1
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25C unless otherwise specified.
APL1001P UNIT Volts Amps
1000 18 72 30 520 4.16 -55 to 150
and Inductive Current Clamped
Volts Watts W/C C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 18 0.60 25
(VDS > I D(ON) x R DS(ON) Max, VGS = 8V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID [Cont.])
Ohms A
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
250 100 2 4
nA Volts
THERMAL CHARACTERISTICS
Symbol RQJC RQCS Characteristic Junction to Case Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
UNIT C/W
0.24 0.06
8-2001 050-5899 Rev -
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6W MIN TYP
APL1001P
MAX UNIT
6000 775 285 14 14 60 14
7200 1080 430 28 28 92 20
ns pF
SAFE OPERATING AREA CHARACTERISTICS
Symbol SOA1 Characteristic Safe Operating Area Test Conditions / Part Number VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60C MIN TYP MAX UNIT Watts
325
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.3 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 0.01 SINGLE PULSE 0.001 10-5 10-4 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
qJC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
40 VGS=6.5V, 7.0V, 8.0V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 30 6.0 V ID, DRAIN CURRENT (AMPERES)
40 VGS= 15V, 10V, 8V, 7V & 6.5V
30
6.0 V
5.5 V 20 5.0 V 10 4.5 V
5.5 V 20 5.0 V 10 4.5 V
Rev -
8-2001
050-5899
0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
APL1001P
TJ = -55C ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
20
1.30
NORMALIZED TO V
GS
= 10V @ 0.5 I [Cont.]
D
1.20 VGS=10V 1.10
15
10
1.00
VGS=20V
5
TJ = +125C TJ = +25C TJ = -55C
0.90
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 20 ID, DRAIN CURRENT (AMPERES)
0
0.80
0
10 20 30 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25
I
D
1.15 1.10 1.05 1.00
15
10
0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
5
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
= 0.5 I V
GS D
0
[Cont.]
= 10V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 100S C, CAPACITANCE (pF)
2.0
1.1 1.0 0.9
1.5
1.0
0.8 0.7 0.6 -50
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
100
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000 Ciss 5,000
ID, DRAIN CURRENT (AMPERES)
10
1mS
10mS 1 TC =+25C TJ =+150C SINGLE PULSE .1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 100mS
1,000 500
Coss
DC 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
050-5899
Rev -
8-2001
Crss
APL1001P
P-Pack Package Outline
41.53 (1.635) 41.02 (1.615) 35.18 (1.385) 34.67 (1.365) 28.70 (1.130) 28.45 (1.120) 3.43 (.135) 2.92 (.115) (4-Places) 9.27 (.365) 8.64 (.340) 1.40 (.055) 1.02 (.040)
3.43 (.135) 2.92 (.115) (4-Places)
Source
Drain
4.06 (.160) 3.81 (.150) (5 Places) 51.05 (2.01) 50.55 (1.99) 35.81 (1.41) 35.31 (1.39) 29.34 (1.155) 29.08 (1.145)
10.92 (.430) 10.67 (.420)
Gate
Source Sense
8-2001
5.33 (.210) 4.83 (.190)
Rev -
11.63 (.458) 11.13 (.438)
4.39 (.173) 4.14 (.163) (4 Places) 12.45 (.490) 11.94 (.470)
.635 (.025) .381 (.015)
Dimensions in Millimeters and (Inches)
050-5899
APT's devices are covered by one or more of the following U.S.patents:
4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058

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